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WFD5N50

Winsemi
Part Number WFD5N50
Manufacturer Winsemi
Description Silicon N-Channel MOSFET
Published Mar 21, 2017
Detailed Description Features ■ 5A,500V,RDS(on)(Max1.6Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fast Switching Capability ■ 100%Aval...
Datasheet PDF File WFD5N50 PDF File

WFD5N50
WFD5N50


Overview
Features ■ 5A,500V,RDS(on)(Max1.
6Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) WFD5N50 Silicon N-Channel MOSFET General Description This Power MO SFET is pro du ced using Winse mi ’s ad van ced plana r stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche charact er istics.
This devices is spe cially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.
Absolute Maximum Ratings Symbol Parameter V...



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