K2828

2SK2828 Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC–DC converter Avalanche ratings Outline TO–3P ADE-208-514 C (Z) 4th. Edition Feb 1999 D 2 1 G 1 2 33 S 1. Gate 2. Drain (Flange) 3. Source 2SK2828 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Channel temperature Tch Storage temperature Tstg Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Ratings 700 ±30 12 48 12 175 150 –55 to +150 Unit V V A A A W °C °C 2 Electrical Characteristics (Ta = 25°C) Item Symbol Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current I GSS Zero gate voltege dra...