Document
DMG2305UXQ
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -20V
RDS(ON) Max
52mΩ @VGS = -4.5V 100mΩ @VGS = -2.5V
Package SOT23
ID TA = +25°C
-5.0A
-3.6A
Features
Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4)
Description and Applications
This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
Backlighting Power Management Functions DC-DC Converters Motor Control
Mechanical Data
Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: 0.009 grams (Approximate)
D
D
Top View
G
S
Internal Schematic
GS Top View
Ordering Information (Note 5)
Notes:
Part Number
Compliance
Case
Packaging
DMG2305UXQ-7
Automotive
SOT23
3,000/Tape & Reel
DMG2305UXQ-13
Automotive
SOT23
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
23X
YM
23X = Product Type Marking Code YM = Date Code Marking Y = Year (ex: F = 2018) M = Month (ex: 9 = September)
Date Code Key Year Code
Month Code
2009
~
2016
2017
2018
2019
2020
W~ DE FGH
Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 1 2 3 4 5 6 78 9OND
DMG2305UXQ
Document number: DS38238 Rev. 3 - 2
1 of 6 www.diodes.com
September 2018
© Diodes Incorporated
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = -4.5V Pulsed Drain Current (Note 7)
Steady State
t<10s
TA = +25°C TA = +70°C
TA = +25°C TA = +70°C
Symbol VDSS VGSS ID
ID IDM
DMG2305UXQ
Value -20 ±8
-4.2 -3.3
-5.0 -4.0
-15
Unit V V A
A A
Thermal Characteristics
Characteristic Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 8) Operating and Storage Temperature Range
Steady State t<10s
Symbol PD
RθJA
RθJC TJ, TSTG
Value 1.4 90 64 33
-55 to +150
Unit W °C/W °C/W °C/W °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current (TJ = +25°C) Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS (Note 9) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Symbol
BVDSS IDSS IGSS
VGS(TH)
RDS(ON)
|YFS|
Ciss Coss Crss RG
QG QGS QGD tD(ON)
tR tD(OFF)
tF
Min
-20
-0.5
Typ
— 40 52 68 9
808 85 77 15.2
10.2 1.3 2.2 10.8 13.7 79.3 34.7
Max
-1.0 ±100
-0.9 52 100 200
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 7. Repetitive rating, pulse width limited by junction temperature. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing.
Unit
Test Condition
V VGS = 0V, ID = -250µA µA VDS = -20V, VGS = 0V nA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = -250µA
VGS = -4.5V, ID = -4.2A mΩ VGS = -2.5V, ID = -3.4A
VGS = -1.8V, ID = -2A S VDS = -5V, ID = -4A
pF
pF
VDS = -15V, VGS = 0V f = 1.0MHz
pF
Ω VGS = 0V, VDS = 0V, f = 1.0MHz
nC nC VGS = -4.5V, VDS = -4V, nC ID = -3.5A
ns
ns VDS = -4V, VGS = -4.5V, ns RG = 6Ω, ID = -1A ns
DMG2305UXQ
Document number: DS38238 Rev. 3 - 2
2 of 6 www.diodes.com
September 2018
© Diodes Incorporated
DMG2305UXQ
-ID, DRAIN CURRENT (A)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
20.0 18.0 16.0 14.0 12.0 10.0
8.0 6.0 4.0 2.0 0.