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DMG2305UXQ Dataheets PDF



Part Number DMG2305UXQ
Manufacturers Diodes
Logo Diodes
Description P-Channel MOSFET
Datasheet DMG2305UXQ DatasheetDMG2305UXQ Datasheet (PDF)

DMG2305UXQ P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -20V RDS(ON) Max 52mΩ @VGS = -4.5V 100mΩ @VGS = -2.5V Package SOT23 ID TA = +25°C -5.0A -3.6A Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) Description and Applications This MOSFET is designed to meet the st.

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DMG2305UXQ P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -20V RDS(ON) Max 52mΩ @VGS = -4.5V 100mΩ @VGS = -2.5V Package SOT23 ID TA = +25°C -5.0A -3.6A Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  Backlighting  Power Management Functions  DC-DC Converters  Motor Control Mechanical Data  Case: SOT23  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020D  Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Terminals Connections: See Diagram Below  Weight: 0.009 grams (Approximate) D D Top View G S Internal Schematic GS Top View Ordering Information (Note 5) Notes: Part Number Compliance Case Packaging DMG2305UXQ-7 Automotive SOT23 3,000/Tape & Reel DMG2305UXQ-13 Automotive SOT23 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information 23X YM 23X = Product Type Marking Code YM = Date Code Marking Y = Year (ex: F = 2018) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2009 ~ 2016 2017 2018 2019 2020 W~ DE FGH Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 1 2 3 4 5 6 78 9OND DMG2305UXQ Document number: DS38238 Rev. 3 - 2 1 of 6 www.diodes.com September 2018 © Diodes Incorporated Maximum Ratings (@TA = +25°C, unless otherwise specified.) Drain-Source Voltage Gate-Source Voltage Characteristic Continuous Drain Current (Note 6) VGS = -4.5V Pulsed Drain Current (Note 7) Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C Symbol VDSS VGSS ID ID IDM DMG2305UXQ Value -20 ±8 -4.2 -3.3 -5.0 -4.0 -15 Unit V V A A A Thermal Characteristics Characteristic Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 8) Operating and Storage Temperature Range Steady State t<10s Symbol PD RθJA RθJC TJ, TSTG Value 1.4 90 64 33 -55 to +150 Unit W °C/W °C/W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current (TJ = +25°C) Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS (Note 9) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Symbol BVDSS IDSS IGSS VGS(TH) RDS(ON) |YFS| Ciss Coss Crss RG QG QGS QGD tD(ON) tR tD(OFF) tF Min -20   -0.5              Typ    — 40 52 68 9 808 85 77 15.2 10.2 1.3 2.2 10.8 13.7 79.3 34.7 Max  -1.0 ±100 -0.9 52 100 200             Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 7. Repetitive rating, pulse width limited by junction temperature. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. Unit Test Condition V VGS = 0V, ID = -250µA µA VDS = -20V, VGS = 0V nA VGS = ±8V, VDS = 0V V VDS = VGS, ID = -250µA VGS = -4.5V, ID = -4.2A mΩ VGS = -2.5V, ID = -3.4A VGS = -1.8V, ID = -2A S VDS = -5V, ID = -4A pF pF VDS = -15V, VGS = 0V f = 1.0MHz pF Ω VGS = 0V, VDS = 0V, f = 1.0MHz nC nC VGS = -4.5V, VDS = -4V, nC ID = -3.5A ns ns VDS = -4V, VGS = -4.5V, ns RG = 6Ω, ID = -1A ns DMG2305UXQ Document number: DS38238 Rev. 3 - 2 2 of 6 www.diodes.com September 2018 © Diodes Incorporated DMG2305UXQ -ID, DRAIN CURRENT (A) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 20.0 18.0 16.0 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.


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