BSS138DWQ
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
V(BR)DSS 50V
RDS(ON) Max 3.5Ω @ VGS...
BSS138DWQ
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Product Summary
V(BR)DSS 50V
RDS(ON) Max 3.5Ω @ VGS = 10V
ID Max TA = +25°C
200mA
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
Load Switch
SOT363
Features
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The BSS138DWQ is suitable for automotive applications
requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/
Mechanical Data
Case: SOT-363 Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (Approximate)
D2 G1 S1
Top View
S2 G2 D1
Top View Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
Case
Packaging
BSS138DWQ-7
SOT363
3,000/Tape & Reel
BSS138DWQ-13
SOT363
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/...