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BSS138DWQ

Diodes

DUAL N-CHANNEL MOSFET

BSS138DWQ DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 50V RDS(ON) Max 3.5Ω @ VGS...


Diodes

BSS138DWQ

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BSS138DWQ DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 50V RDS(ON) Max 3.5Ω @ VGS = 10V ID Max TA = +25°C 200mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Load Switch SOT363 Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The BSS138DWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ Mechanical Data  Case: SOT-363  Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208  Terminal Connections: See Diagram  Weight: 0.006 grams (Approximate) D2 G1 S1 Top View S2 G2 D1 Top View Internal Schematic Ordering Information (Note 4) Notes: Part Number Case Packaging BSS138DWQ-7 SOT363 3,000/Tape & Reel BSS138DWQ-13 SOT363 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/...




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