DUAL N-CHANNEL MOSFET
A D VNAEN CWEPDRIONDFUOCRTM A T I O N
DMT3011LDT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Device Q1 Q2
...
Description
A D VNAEN CWEPDRIONDFUOCRTM A T I O N
DMT3011LDT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Device Q1 Q2
V(BR)DSS 30V 30V
RDS(ON) Max
20mΩ @ VGS = 10V 32mΩ @ VGS = 4.5V 11.1mΩ @ VGS = 10V 13.8mΩ @ VGS = 4.5V
ID Max TA = +25°C
8A 6.3A 10.7A 9.6A
Features
0.6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low Gate Threshold Voltage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Applications
Mobile Computing Point of Load
Mechanical Data
Case: V-DFN3030-8 (Type K) Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Fin...
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