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DMN2008LFU

Diodes

DUAL N-CHANNEL MOSFET


Description
Product Summary BVDSS 20V RDS(ON) Max 5.4mΩ @ VGS = 4.5V 6.2mΩ @ VGS = 4.0V 6.4mΩ @ VGS = 3.7V 7.5mΩ @ VGS = 3.1V 9.6mΩ @ VGS = 2.5V ID TA = +25°C 14.5A 13.5A 13.0A 12.0A 10.5A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) , yet maintain superior switching performance, making it ideal for high efficiency...



Diodes

DMN2008LFU

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