DMN10H170SVTQ

ADVANCED INNEFWORPRMOADTIUOCNT Product Summary BVDSS 100V RDS(ON) Max 160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V ID Max TA = +25°C 2.6A 2.3A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications  Power Management Functions  Battery Operated Systems and Solid-State Relays  Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. DMN10H170SVTQ 100V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) Mechanical Data  Case: TSOT26  Case Material: Molded Plastic, “Green” Molding Compound. UL Fl...