P-CHANNEL ENHANCEMENT MODE MOSFET
NEW PRODUCT
DMS2120LFWB
P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR® SUPER BARRIER RECTIFIER
Features
• Low ...
Description
NEW PRODUCT
DMS2120LFWB
P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR® SUPER BARRIER RECTIFIER
Features
Low On-Resistance 95mΩ @VGS = -4.5V 120mΩ @VGS = -2.5V 150mΩ (typ) @VGS = -1.8V
Low Gate Threshold Voltage, -1.3V Max Fast Switching Speed Low Input/Output Leakage Incorporates Low VF Super Barrier Rectifier (SBR) Low Profile, 0.5mm Max Height Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-DFN3020-8 Type B Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – NiPdAu annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e4 Weight: 0.011 grams (approximate)
U-DFN3020-8 Type B
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