Document
DMS3017SSD
ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• DIOFET utilize a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS(on) – minimizes conduction loss • Low VSD – reducing the losses due to body diode construction • Low Qrr – lower Qrr of the integrated Schottky reduces body diode switching losses • Low gate capacitance (Qg/Qgs) ratio – reduces risk of shootthrough or cross conduction currents at high frequencies • Avalanche rugged – IAR and EAR rated
• Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SO-8 • Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: See Diagram Below • Weight: 0.072 grams (approximate)
Top View
Q1 Q2 D2 G2 D1 D2
D2 .