4-Mbit (512K words x 8 bit) Static RAM
CY7C1049G CY7C1049GE
4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting Code (ECC)
4-Mbit (512K words × 8 bit...
Description
CY7C1049G CY7C1049GE
4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting Code (ECC)
4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting Code (ECC)
Features
■ High speed ❐ tAA = 10 ns
■ Embedded ECC for single-bit error correction[1]
■ Low active and standby currents ❐ Active current: ICC = 38 mA typical ❐ Standby current: ISB2 = 6 mA typical
■ Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V
■ 1.0-V data retention
■ TTL-compatible inputs and outputs
■ Error indication (ERR) pin to indicate 1-bit error detection and correction
■ Pb-free 36-pin SOJ and 44-pin TSOP II packages
Functional Description
CY7C1049G and CY7C1049GE are high-performance CMOS fast static RAM devices with embedded ECC. Both devices are
offered in single and dual chip-enable options and in multiple pin configurations. The CY7C1049GE device includes an ERR pin that signals an error-detection and correction event during a read cycle.
Data writes ar...
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