CY62177ESL

CY62177ESL MoBL® 32-Mbit (2 M × 16/4 M × 8) Static RAM 32-Mbit (2 M × 16/4 M × 8) Static RAM Features ■ Thin small outline package-I (TSOP-I) configurable as 2 M × 16 or as 4 M × 8 static RAM (SRAM) ■ High-speed up to 55 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 3 µA ❐ Maximum standby current: 25 µA ■ Ultra low active power ❐ Typical active current: 4.5 mA at f = 1 MHz ■ Easy memory expansion with CE1, CE2, and OE Features ■ Automatic power-down when deselected ■ Complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Available in Pb-free 48-ball TSOP-I package Functional Description The CY62177ESL is a high performance CMOS static RAM organized as 2 M words by 16 bits and 4 M words by 8 bits. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life (MoBL®) in portable applications such as ...