CY7C2670KV18

CY7C2670KV18 144-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 144-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features ■ 144-Mbit density (4 M × 36) ■ 550-MHz clock for high bandwidth ■ Two-word burst for reducing address bus frequency ■ Double data rate (DDR) interfaces (data transferred at 1100 MHz) at 550 MHz ■ Available in 2.5 clock cycle latency ■ Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only ■ Echo clocks (CQ and CQ) simplify data capture in high-speed systems ■ Data valid pin (QVLD) to indicate valid data on the output ■ On-die termination (ODT) feature ❐ Supported for D[x:0], BWS[x:0], and K/K inputs ■ Synchronous internally self-timed writes ■ DDR II+ operates with 2.5-cycle read latency when DOFF is asserted high ■ Operates similar to DDR I device with 1 cycle read latency when DOFF is asserted low ■ Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4...