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CY7C1351G

Cypress Semiconductor

4-Mbit (128K x 36) Flow-Through SRAM

CY7C1351G 4-Mbit (128K × 36) Flow-Through SRAM with NoBL™ Architecture 4-Mbit (128K × 36) Flow-Through SRAM with NoBL™ ...


Cypress Semiconductor

CY7C1351G

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Description
CY7C1351G 4-Mbit (128K × 36) Flow-Through SRAM with NoBL™ Architecture 4-Mbit (128K × 36) Flow-Through SRAM with NoBL™ Architecture Features ■ Can support up to 133-MHz bus operations with zero wait states ❐ Data is transferred on every clock ■ Pin compatible and functionally equivalent to ZBT™ devices ■ Internally self-timed output buffer control to eliminate the need to use OE ■ Registered inputs for flow-through operation ■ Byte write capability ■ 128 K × 36 common I/O architecture ■ 2.5 V/3.3 V I/O power supply (VDDQ) ■ Fast clock-to-output times ❐ 6.5 ns (for 133-MHz device) ■ Clock enable (CEN) pin to suspend operation ■ Synchronous self-timed writes ■ Asynchronous output enable ■ Available in Pb-free 100-pin TQFP package ■ Burst capability – linear or interleaved burst order ■ Low standby power Functional Description The CY7C1351G is a 3.3 V, 128K × 36 synchronous flow-through burst SRAM designed specifically to support unlimited tru...




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