S29WS256P

S29WS512P S29WS256P S29WS128P 512/256/128 Mb (32/16/8 M x 16 bit), 1.8 V, Simultaneous Read/Write Flash Features  Single 1.8 V read/program/erase (1.70–1.95 V)  90 nm MirrorBit™ Technology  Simultaneous Read/Write operation with zero latency  Random page read access mode of 8 words with 20 ns intra page access time  32 Word / 64 Byte Write Buffer  Sixteen-bank architecture consisting of 32/16/8 Mwords for 512/256/128P, respectively  Four 16 Kword sectors at both top and bottom of memory array  510/254/126 64Kword sectors (WS512/256/128P)  Programmable linear (8/16/32) with or without wrap around and continuous burst read modes  Secured Silicon Sector region consisting of 128 words each for factory and 128 words for customer  20-year data retention (typical)  Cycling Endurance: 100,000 cycles per sector (typical)  Command set compatible with JEDEC (42.4) standard  Hardware (WP#) protection of top and bottom sectors  Dual boot sector con...