MSN0860Z

MSN0860Z 75V(D-S) N-Channel Enhancement Mode Power MOS FET Features ● VDS=75V；ID=60A@ VGS=10V； RDS(ON)<8.5mΩ @ VGS=10V ● Special process technology for high ESD capability ● Special designed for Convertors and power controls ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Lead Free Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply PIN Configuration Marking and pin assignment Schematic diagram TO-251 top view Package Marking and Ordering Information Device Marking Device Device Package MSN0860Z MSN0860Z TO-251-3L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃) Parameter Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V) Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continu...