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FQU4N60

600V N-Channel MOSFET

Description

FQU4N60 600V N-Channel MOSFET FQU4N60 600V N-Channel MOSFET Features 2.6A, 600V @TJ = 25°C Typ. RDS(on) = 1.0Ω Low gate charge (typical 12.8nC) Low effective output capacitance (typ ical 32pF) 100% avalanche tested Improved dv/dt capability November 2002 QFET TM Description These N-Channel enhancement mode power field effect transistors are pro...

Fairchild Semiconductor

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