BDX88B

isc Silicon PNP Darlington Power Transistor BDX88/A/B/C DESCRIPTION ·High DC Current Gain- : hFE= 750(Min)@ IC= -6A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDX88; -60V(Min)- BDX88A -80V(Min)- BDX88B; -100V(Min)- BDX88C ·Complement to Type BDX87/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX88 -45 BDX88A -60 VCBO Collector-Base Voltage BDX88B -80 BDX88C -100 BDX88 -45 VCEO Collector-Emitter Voltage BDX88A -60 BDX88B -80 BDX88C -100 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -12 ICM Collector Current-Peak -18 IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -200 120 200 Tstg Storage Temperature Range -65~200 UNIT V V V A A mA W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.45 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDX88/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX88 -45 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX88A BDX88B IC= -50mA; IB= 0 -60 -80 V BDX88C -100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -6A; IB= -24mA -2.0 V VCE(sat)-2 Collector-...