HMC8400

Data Sheet 2 GHz to 30 GHz, GaAs pHEMT MMIC Low Noise Amplifier HMC8400 FEATURES Output power for 1 dB compression (P1dB): 14.5 dBm typical Saturated output power (PSAT): 17 dBm typical Gain: 13.5 dB typical Noise figure: 2 dB Output third-order intercept (IP3): 26.5 dBm typical Supply voltage: 5 V at 67 mA 50 Ω matched input/output Die size: 2.7 mm × 1.35 mm × 0.05 mm APPLICATIONS Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military and space Telecommunications infrastructure Fiber optics GENERAL DESCRIPTION The HMC8400 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC). The HMC8400 is a wideband low noise amplifier that operates between 2 GHz and 30 GHz. The amplifier provides 13.5 dB of gain, a 2 dB noise figure, 26.5 dBm output IP3, and 14.5 dBm of output power at 1 dB gain compression, requiring 67 mA from a 5 V supply. The HMC8400 is self biased with only a single positive supply needed to achieve a drain current IDD of 67 mA. The HMC8400 also has a gain control option, VGG2. The HMC8400 amplifier input/outputs are internally matched to 50 Ω and dc blocked, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). 3 VDD 2 VGG2 1 RFIN FUNCTIONAL BLOCK DIAGRAM HMC8400 4 RFOUT Figure 1. 13852-001 Rev. B Document Feedback Information fur...