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Data Sheet
High Isolation, Nonreflective, GaAs, SPDT Switch,100 MHz to 4 GHz
HMC349AMS8G
FEATURES
Nonreflective, 50 Ω design High isolation: 57 dB to 2 GHz Low insertion loss: 0.9 dB to 2 GHz High input linearity
1 dB power compression (P1dB): 34 dBm typical Third-order intercept (IP3): 52 dBm typical High power handling 33.5 dBm through path 26.5 dBm terminated path Single positive supply: 3 V to 5 V CMOS-/TTL-compatible control All off state control 8-lead mini small outline package with exposed pad (MINI_SO_EP)
APPLICATIONS
Cellular/4G infrastructure Wireless infrastructure Mobile radios Test equipment
GENERAL DESCRIPTION
The HMC349AMS8G is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (PHEMT), single-pole, double throw (SPDT) switch specified from 100 MHz to 4 GHz.
The HMC349AMS8G is well suited for cellular infrastructure applications by yielding high isolation of 57 dB, low insertion loss of 0.9 dB, high input IP3 of 52 dBm, and high input P1dB of .