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HMC349AMS8G Dataheets PDF



Part Number HMC349AMS8G
Manufacturers Analog Devices
Logo Analog Devices
Description SPDT Switch
Datasheet HMC349AMS8G DatasheetHMC349AMS8G Datasheet (PDF)

Data Sheet High Isolation, Nonreflective, GaAs, SPDT Switch,100 MHz to 4 GHz HMC349AMS8G FEATURES Nonreflective, 50 Ω design High isolation: 57 dB to 2 GHz Low insertion loss: 0.9 dB to 2 GHz High input linearity 1 dB power compression (P1dB): 34 dBm typical Third-order intercept (IP3): 52 dBm typical High power handling 33.5 dBm through path 26.5 dBm terminated path Single positive supply: 3 V to 5 V CMOS-/TTL-compatible control All off state control 8-lead mini small outline package with exp.

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Data Sheet High Isolation, Nonreflective, GaAs, SPDT Switch,100 MHz to 4 GHz HMC349AMS8G FEATURES Nonreflective, 50 Ω design High isolation: 57 dB to 2 GHz Low insertion loss: 0.9 dB to 2 GHz High input linearity 1 dB power compression (P1dB): 34 dBm typical Third-order intercept (IP3): 52 dBm typical High power handling 33.5 dBm through path 26.5 dBm terminated path Single positive supply: 3 V to 5 V CMOS-/TTL-compatible control All off state control 8-lead mini small outline package with exposed pad (MINI_SO_EP) APPLICATIONS Cellular/4G infrastructure Wireless infrastructure Mobile radios Test equipment GENERAL DESCRIPTION The HMC349AMS8G is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (PHEMT), single-pole, double throw (SPDT) switch specified from 100 MHz to 4 GHz. The HMC349AMS8G is well suited for cellular infrastructure applications by yielding high isolation of 57 dB, low insertion loss of 0.9 dB, high input IP3 of 52 dBm, and high input P1dB of .


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