600V N-Channel MOSFET
CMD2N60D/CMU2N60D
General Description
600V N-Channel MOSFET
Product Summery
The 2N60D have been fabricated using an a...
Description
CMD2N60D/CMU2N60D
General Description
600V N-Channel MOSFET
Product Summery
The 2N60D have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
Features
BVDSS 600V
RDSON 5
ID 2A
Applications
Power Supply PFC High Current,High Speed Switching
2A, 600V, RDS(on) = 5Ω @VGS = 10 V Fast switching 100% Avalanche Tested
TO252 / TO251 Pin Configuration
D
Improved dv/dt capability ESD Improved capability
Absolute Maximum Ratings
GDS
TO252 (CMD2N60D)
TC = 25°C unless otherwise noted
G D S TO251 (CMU2N60D)
Symbol
Parameter
Value
VDSS ID
IDM VGSS EAS IAR
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed a
Gate-Source Voltage
Single Pulsed Avalanche Energy b
Avalanche Current a
600
2 1.14
6
± 30 120 2
EAR Repetitive Avalanche Energy a
3.8
dv/dt
Peak Diode Recovery dv/dt c
4.5
PD Power Dissipation (TC...
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