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CMD2N60D

Cmos

600V N-Channel MOSFET

CMD2N60D/CMU2N60D General Description 600V N-Channel MOSFET Product Summery The 2N60D have been fabricated using an a...


Cmos

CMD2N60D

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Description
CMD2N60D/CMU2N60D General Description 600V N-Channel MOSFET Product Summery The 2N60D have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. Features BVDSS 600V RDSON 5 ID 2A Applications Power Supply PFC High Current,High Speed Switching 2A, 600V, RDS(on) = 5Ω @VGS = 10 V Fast switching 100% Avalanche Tested TO252 / TO251 Pin Configuration D Improved dv/dt capability ESD Improved capability Absolute Maximum Ratings GDS TO252 (CMD2N60D) TC = 25°C unless otherwise noted G D S TO251 (CMU2N60D) Symbol Parameter Value VDSS ID IDM VGSS EAS IAR Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed a Gate-Source Voltage Single Pulsed Avalanche Energy b Avalanche Current a 600 2 1.14 6 ± 30 120 2 EAR Repetitive Avalanche Energy a 3.8 dv/dt Peak Diode Recovery dv/dt c 4.5 PD Power Dissipation (TC...




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