N-Channel Enhancement Mode Field Effect Transistor
Description
CMN3100
N-Channel Enhancement Mode Field Effect Transistor
General Description
The CMN3100 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
Features RDS(ON)<14mΩ @ VGS=10V RDS(ON)<16mΩ @ VGS=4.5V Simple driv...
