Document
CMD20N06L/CMU20N06L
60V N-Channel MOSFET
General Description
The 20N06 combines advanced trench MOSFET technology .This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
Features
20A,60V.RDS(ON)=0.046Ω@VGS=10V Fast switching Low Threshold Drive
Absolute Maximum Ratings
Product Summery
BVDSS 60V
RDSON 46m
ID 20A
Applications
Power Supplies Converters Power Motor Controls Bridge Circuits
TO252 / TO251 Pin Configuration
GDS
TO252 (CMD20N06L)
G DS TO251
(CMU20N06L)
Symbol VDS VGS
ID@TA=25 ID@TA=100
IDM EAS PD@TA=25 TSTG
TJ
Parameter Drain-Source Voltage Gate-Sou ce Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy (Note 1) Total Power Dissipation Storage Tempera.