HMC408LP3E

v03.0705 11 Typical Applications The HMC408LP3 / HMC408LP3E is ideal for: 802.11a & HiperLAN WLAN UNII & Point-to-Point / Multi-Point Radios Access Point Radios Functional Diagram HMC408LP3 / 408LP3E GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz Features Gain: 20 dB Saturated Power: +32.5 dBm @ 27% PAE Single Supply Voltage: +5V Power Down Capability 3x3 mm Leadless SMT Package General Description The HMC408LP3 & HMC408LP3E are 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) Power Amplifier MMICs which offer +30 dBm P1dB. The amplifier provides 20 dB of gain, +32.5 dBm of saturated power, and 27% PAE from a +5V supply voltage. The input is internally matched to 50 Ohms while the output requires a minimum of external components. Vpd can be used for full power down or RF output power/current control. The amplifier is packaged in a low cost, 3x3 mm leadless surface mount package with an exposed base for improved RF and thermal performance. LINEAR & POWER AMPLIFIERS - SMT 11 - 34 Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss* Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Harmonics, Pout= 30 dBm, F= 5.8 GHz Noise Figure Supply Current (Icq) Control Current (Ipd) Switching Speed Min. Typ. Max. 5.7 - 5.9 17 20 0.045 0.055 8 14 Icq= 750 mA Icq= 500 m...