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HMC6981LS6

Analog Devices

GaAs pHEMT MMIC

Amplifiers - Linear & Power - SMT v03.1018 Typical Applications The HMC6981LS6 is ideal for: • Point-to-Point Radios • ...


Analog Devices

HMC6981LS6

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Description
Amplifiers - Linear & Power - SMT v03.1018 Typical Applications The HMC6981LS6 is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios SATCOM Functional Diagram HMC6981LS6 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 15 - 20 GHz Features P1dB Output Power: +32 dBm 25% PAE @ +34 dBm Pout Gain: 26 dB Output IP3: +43 dBm 50 Ohm Matched Input/Output Ceramic 6 x 6 mm High Frequency Air Cavity Package General Description The HMC6981LS6 is a four-stage GaAs pHEMT MMIC Power Amplifier with an integrated temperature compensated on-chip Power Detector, which operates between 15 and 20 GHz. The amplifier provides 26 dB of gain, +34 dBm of saturated output power, and 25% PAE from a +5.5V supply. With an excellent output IP3 of +43 dBm, the HMC6981LS6 is ideal for linear applications such as high capacity point-to-point or point-to-multi-point radios or SATCOM applications demanding +34 dBm of efficient saturated output power. The HMC6981LS6 is housed in a ceramic 6 x 6 mm high frequency air cavity package which exhibits low thermal resistance and is compatible with high volume surface mount manufacturing techniques. The RF I/Os are internally matched to 50 Ohms. Electrical Specifications, TA = +25° C Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5 = +5.5V, Idd = 1100 mA [1] Parameter Min. Typ. Max. Min. Frequency Range 15 - 17 Gain 24 27 23 Gain Variation Over Temperature 0.042 Input Return Loss 9 Output Return Loss 13 Output Power for 1 dB Compression (P1dB) 30 32 30...




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