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HMC406MS8GE Dataheets PDF



Part Number HMC406MS8GE
Manufacturers Analog Devices
Logo Analog Devices
Description GaAs InGaP HBT MMIC POWER AMPLIFIER
Datasheet HMC406MS8GE DatasheetHMC406MS8GE Datasheet (PDF)

Amplifiers - Linear & Power - SMT HMC406MS8G / 406MS8GE v06.0611 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 6 GHz Typical Applications The HMC406MS8G(E) is ideal for: • WiMAX & WiLAN • DSRC • Military & Maritime • Private Mobile Radio • UNII & ISM Features Gain: 17 dB Saturated Power: +29 dBm 38% PAE Supply Voltage: +5V Power Down Capability Low External Part Count Functional Diagram General Description The HMC406MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT.

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Amplifiers - Linear & Power - SMT HMC406MS8G / 406MS8GE v06.0611 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 6 GHz Typical Applications The HMC406MS8G(E) is ideal for: • WiMAX & WiLAN • DSRC • Military & Maritime • Private Mobile Radio • UNII & ISM Features Gain: 17 dB Saturated Power: +29 dBm 38% PAE Supply Voltage: +5V Power Down Capability Low External Part Count Functional Diagram General Description The HMC406MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 5 and 6 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 17 dB of gain and +29 dBm of saturated power at 38% PAE from a +5V supply voltage. Vpd can be used for full power down or RF output power/ current control. Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V Parameter Frequenc.


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