v03.0605
HMC415LP3 / 415LP3E
GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz
LINEAR & POWER AMPLIFIERS - SMT
11
11...
v03.0605
HMC415LP3 / 415LP3E
GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 66
Typical Applications
This amplifier is ideal for use as a power amplifier for 4.9 - 5.9 GHz applications: 802.11a WLAN HiperLAN WLAN Access Points UNII & ISM Radios
Functional Diagram
Features
Gain: 20 dB
34% PAE @ Psat = +26 dBm
3.7% EVM @ Pout = +15 dBm with 54 Mbps OFDM Signal
Supply Voltage: +3V
Power Down Capability
Low External Part Count
General Description
The HMC415LP3 & HMC415LP3E are high efficiency GaAs InGaP Heterojunction Bipolar
Transistor (HBT) MMIC Power amplifiers which operate between 4.9 and 5.9 GHz. The amplifier is packaged in a low cost, leadless surface mount package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +26 dBm of saturated power, and 34% PAE from a +3V supply voltage. Vpd can be used for full power down or RF output pow...
