HMC8121

Data Sheet FEATURES Gain: 22 dB typical Wide gain control range: 17 dB typical Output third-order intercept (OIP3): 27.5 dBm typical Output power for 1 dB compression (P1dB): 20 dBm typical Saturated output power (PSAT): 21 dBm typical DC supply: 4 V at 265 mA No external matching required Die size: 3.599 mm × 1.369 mm × 0.05 mm APPLICATIONS E-band communication systems High capacity wireless backhaul radio systems Test and measurement 81 GHz to 86 GHz, E-Band Variable Gain Amplifier HMC8121 GENERAL DESCRIPTION The HMC8121 is an integrated E-band, gallium arsenide (GaAs), pseudomorphic (pHEMT), monolithic microwave integrated circuit (MMIC), variable gain amplifier and/or driver amplifier that operates from 81 GHz to 86 GHz. The HMC8121 provides up to 22 dB of gain, 20 dBm output P1dB, 27.5 dBm of OIP3, and 21 dBm of PSAT while requiring only 265 mA from a 4 V power supply. Two gain control voltages (VCTL1 and VCTL2) are provided to allow up to 17 dB of variable gain control. The HMC8121 exhibits excellent linearity and is optimized for E-band communications and high capacity wireless backhaul radio systems. All data is taken with the chip in a 50 Ω test fixture connected via a 3 mil wide × 0.5 mil thick × 7 mil long ribbon on each port. RFIN 1 23 1.6kΩ FUNCTIONAL BLOCK DIAGRAM HMC8121 1.6kΩ 4 5 RFOUT 6 VGG1/VGG2 VDD1 VDD2 ENVDET VCTL1 VCTL2 VGG3 VDD3 VGG4 VDD4 VGG5 VDD5 VGG6 VDD6 VREF VDET 13154-001 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 ...