HMC8402

Data Sheet 2 GHz to 30 GHz, GaAs, pHEMT, MMIC, Low Noise Amplifier HMC8402 FEATURES Output power for 1 dB compression (P1dB): 21.5 dBm typical Saturated output power (PSAT): 22 dBm typical Gain: 13.5 dB typical Noise figure: 2 dB Output third order intercept (IP3): 26 dBm typical Supply voltage: 7 V at 68 mA 50 Ω matched input/output Die size: 2.7 mm × 1.363 mm × 0.05 mm APPLICATIONS Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military and space Telecommunications infrastructure Fiber optics GENERAL DESCRIPTION The HMC8402 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier which operates between 2 GHz and 30 GHz. The amplifier provides 13.5 dB of gain, 2 dB noise figure, 26 dBm output IP3, and 21.5 dBm of output power at 1 dB gain compression while requiring 68 mA from a 7 V supply. The HMC8402 is self biased with only a single positive supply needed to achieve a drain current IDQ of 68 mA. The HMC8402 amplifier input/outputs are internally matched to 50 Ω facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). VDD 13853-001 3 2 VGG2 1 RFIN FUNCTIONAL BLOCK DIAGRAM HMC8402 RFOUT 4 Figure 1. Rev. E Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsib...