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2SCR562F3 Dataheets PDF



Part Number 2SCR562F3
Manufacturers ROHM
Logo ROHM
Description NPN 6.0A 30V Middle Power Transistor
Datasheet 2SCR562F3 Datasheet2SCR562F3 Datasheet (PDF)

2SCR562F3 NPN 6.0A 30V Middle Power Transistor Parameter Value VCEO 30V IC 6A lFeatures 1) Suitable for Middle Power Driver. 2) Low VCE(sat) VCE(sat)=220mV(Max.). (IC/IB=3A/150mA) 3) High collector current. IC=6A(max),ICP=7A(max) 4) Leadless small SMD package (HUML2020L3) Excellent thermal and electrical conductivity. lOutline DFN2020-3S HUML2020L3 lInner circuit Datasheet lApplication LOW FREQUENCY AMPLIFIER lPackaging specifications Part No. Package Taping Reel size Tape width Qu.

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2SCR562F3 NPN 6.0A 30V Middle Power Transistor Parameter Value VCEO 30V IC 6A lFeatures 1) Suitable for Middle Power Driver. 2) Low VCE(sat) VCE(sat)=220mV(Max.). (IC/IB=3A/150mA) 3) High collector current. IC=6A(max),ICP=7A(max) 4) Leadless small SMD package (HUML2020L3) Excellent thermal and electrical conductivity. lOutline DFN2020-3S HUML2020L3 lInner circuit Datasheet lApplication LOW FREQUENCY AMPLIFIER lPackaging specifications Part No. Package Taping Reel size Tape width Quantity code (mm) (mm) (pcs) 2SCR562F3 DFN2020-3S (HUML2020L3) TR 180 8 3000 Marking NT www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 1/6 20200731 - Rev.004 2SCR562F3 Datasheet lAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol Values Unit VCBO 30 V VCEO 30 V VEBO 6 V IC 6 A ICP*1 7 A PD*2 1.0 W PD*3 2.1 W Tj 150 ℃ Tstg -55 to +150 ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Collector-base breakdown voltage BVCBO IC = 100μA 30 - - V Collector-emitter breakdown voltage BVCEO IC = 1mA 30 - - V Emitter-base breakdown voltage BVEBO IE = 100μA 6 - - V Collector cut-off current ICBO VCB = 30V - - 100 nA Emitter cut-off current IEBO VEB = 4V - - 100 nA Collector-emitter saturation voltage VCE(sat) IC = 3A, IB = 150mA - 100 220 mV DC current gain hFE VCE = 2V, IC = 500mA 200 - 500 - Transition frequency fT VCE = 10V, IE = -500mA, f = 100MHz 270 - MHz Output capacitance Cob VCB = 10V, IE = 0A, f = 1MHz - 40 - pF Turn-On time Storage time Fall time ton IC = 3A, IB1 = 300mA, tstg IB2 = -300mA, VCC ⋍ 10V, tf RL = 3.3Ω See test circuit - 30 - ns - 300 - ns - 60 - ns *1 Pw=1ms Single Pulse *2 Mounted on FR4 board(25.4×25.4×1.6mm, Cu PAD:645mm2). *3 Pw=10ms Mounted on FR4 board(25.4×25.4×1.6mm, Cu PAD:645mm2). www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 2/6 20200731 - Rev.004 2SCR562F3 lElectrical characteristic curves(Ta = 25°C) Fig.1 Grounded Emitter Propagation Characteristics Datasheet Fig.2 Typical Output Characteristics Fig.3 DC Current Gain vs. Collector Current(I) Fig.4 DC Current Gain vs. Collector Current(II) www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 3/6 20200731 - Rev.004 2SCR562F3 lElectrical characteristic curves(Ta = 25°C) Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current(I) Datasheet Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current(II) Fig.7 Base-Emitter Saturation Voltage vs. Collector Current Fig.8 Gain Bandwidth Product vs. Emitter Current www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 4/6 20200731 - Rev.004 2SCR562F3 lElectrical characteristic curves(Ta = 25°C) Fig.9 Emitter input capacitance vs. Emitter=Base Voltage Collector output capacitance vs. Collector-Base Voltage Datasheet Fig.10 Safe Operating Area SWITCHING TIME TEST CIRCUIT www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 5/6 20200731 - Rev.004 2SCR562F3 lDimensions Datasheet www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 6/6 20200731 - Rev.004 Notice Precaution on using ROHM Products 1. Our Products are designed and manufactured for application in ordinary electronic equipment (such as AV equipment, OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications. (Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA CLASSⅢ CLASSⅣ CLASSⅢ CLASSⅡb CLASSⅢ CLASSⅢ 2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures: [a] Installation of protection circuits or other protective devices to.


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