2SAR562F3

2SAR562F3 PNP -6.0A -30V Middle Power Transistor Parameter VCEO IC Value -30V -6A lFeatures 1) Suitable for Middle Power Driver. 2) Low VCE(sat) 　　VCE(sat)=-300mV(Max.). 　　(IC/IB=-3A/-150mA) 3) High collector current. 　　IC=-6A(max),ICP=-7A(max) 4) Leadless small SMD package (HUML2020L3) 　　Excellent thermal and electrical conductivity. lOutline 　 DFN2020-3S 　 HUML2020L3 lInner circuit 　 　 　 　 　 Datasheet lApplication LOW FREQUENCY AMPLIFIER lPackaging specifications Part No. Package Package size 2SAR562F3 DFN2020-3S (HUML2020L3) 2020 Taping code Reel size Tape width Quantity (mm) (mm) (pcs) Marking TR 180 8 3000 MT 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/6 20190527 - Rev.003 2SAR562F3 　 　 　 　　 　 　 　 　 　 　 　 　 　 Datasheet lAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP*1 PD*2 PD*3 Tj Tstg Values -30 -30 -6 -6 -7 1.0 2.1 150 -55 to +150 Unit V V V A A W W ℃ ℃ lElectrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Output capacitance Symbol Con...