FQF8N60

HIGH VOLTAGE N-Channel MOSFET      FQ F8 N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Extended Safe Operating Area  □ Unrivalled Gate Charge :Qg= 40nC (Typ.) □ BVDSS=600V,ID=7.5A □ RDS(on) :1.32 Ω (Max) @VG=10V □ 100% Avalanche Tested GD S G! D ! ● ◀▲ ● ● ! S   TO‐220F    G‐Gate,D‐Drain,S‐Sourse    Absolute Maximum Ratings Tc=25℃ unless other wise noted Symbol VDSS ID VGS EAS IAR PD TJ,TSTG TL Parameter Drain-Sourse Voltage Drain Current -continuous (Tc=25℃) -continuous (Tc=100℃) Gate-Sourse Voltage Single Plused Avanche Energy (Note1) Avalanche Current (Note2) Power Dissipation (Tc=25℃) Operating and Storage Temperature Range Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds FQ F8 N60 600 7.5* 4.7* ±30 420 7.5 48 -55 ~ +150 300 Units V A A V mJ A W ℃ ℃ Thermal Characteristics  Symbol Parameter RθJC Thermal Resi...