Transistors
4V Drive Pch+Pch MOS FET
SP8J3
SP8J3
zStructure Silicon P-channel MOS FET
zFeatures 1) Low On-resistance. ...
Transistors
4V Drive Pch+Pch MOS FET
SP8J3
SP8J3
zStructure Silicon P-channel MOS FET
zFeatures 1) Low On-resistance. (100mΩ at 4.5V) 2) High Power Package. (PD=2.0W) 3) High speed switching. 4) Low voltage drive. (4V)
zApplications Power switching, DC-DC converter
zExternal dimensions (Unit : mm)
SOP8
5.0 0.4
1.75
(8) (5)
3.9 6.0 0.4Min.
1pin mark
(1) 1.27
(4)
0.2
Each lead has same dimensions
zPackaging specifications
Type SP8J3
Package Code Basic ordering unit (pieces)
Taping TB 2500
zInner circuit
(8) (7) (6)
(5)
∗2 ∗2 ∗1 ∗1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Source current (Body diode)
Continuous Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board
Symbol
VDSS VGSS
ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg
(1) (2) (3)
∗1 ...