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MTDB6N20H8
N-Channel Enhancement Mode Power MOSFET
Description
CYStech Electronics Corp. Spec. No. : C875H8 Issued Date : 2016.12.19 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTDB6N20H8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDSON(typ)@VGS=10V, ID=3A RDSON(typ)@VGS=4.5V, ID=2A 200 V 8A 1.8A 285 mΩ 287 mΩ Features Single Drive Requirement Low On-resistance Fast Switching...
Cystech Electonics
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MTDB6N20H8
N-Channel Enhancement Mode Power MOSFET
- Cystech Electonics
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