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MTB1D5N03H8

Cystech Electonics
Part Number MTB1D5N03H8
Manufacturer Cystech Electonics
Description N-Channel Enhancement Mode Power MOSFET
Published Feb 28, 2017
Detailed Description CYStech Electronics Corp. Spec. No. : C984H8 Issued Date : 2017.01.06 Revised Date : Page No. : 1/ 10 N-Channel Enhanc...
Datasheet PDF File MTB1D5N03H8 PDF File

MTB1D5N03H8
MTB1D5N03H8

Overview
CYStech Electronics Corp.
Spec.
No.
: C984H8 Issued Date : 2017.
01.
06 Revised Date : Page No.
: 1/ 10 N-Channel Enhancement Mode Power MOSFET MTB1D5N03H8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.
5V, ID=20A 30V 156A(silicon limit) 84A(package limit) 23.
5A 1.
3mΩ(typ) 1.
6mΩ(typ) Symbol MTB1D5N03H8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTB1D5N03H8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating an...


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