IR370SG12HCB

Preliminary Data Sheet I0212J 12/99 PHASE CONTROL THYRISTORS IR370SG..HCB Junction Size: Square 370 mils Wafer Size: 4" VRRM Class: Passivation Process: 600 to 1200 V Glassivated MESA Reference IR Packaged Part: 50RIA Series Major Ratings and Characteristics Parameters Units Test Conditions VTM Maximum On-state Voltage 1.2 V TJ= 25°C, IT = 25 A VDRM/VRRM Direct and Reverse Breakdown Voltage 600 to 1200 V TJ = 25°C, IDRM /IRRM = 100 µA (1) IGT Max. Required DC Gate Current to Trigger 150 mA TJ= 25° C, anode supply = 6 V, resistive load VGT Max. Required DC Gate Voltage to Trigger 2 V TJ = 25° C, anode supply = 6 V, resistive load IH Holding Current Range 5 to 200 mA Anode supply = 6 V, resistive load IL MaximumLatchingCurrent (1) Nitrogen flow on die edge. 400mA Anode supply = 6 V, resistive load Mechanical Characteristics Nominal Back Metal Composition, Thickness Nominal Front Metal Composition, Thickness Chip Dimensions Wafer Diameter Wafer Thickness Ma...