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UPD4164-2 Dataheets PDF



Part Number UPD4164-2
Manufacturers NEC
Logo NEC
Description 65536 x 1-BIT DYNAMIC RANDOM ACCESS MEMORY
Datasheet UPD4164-2 DatasheetUPD4164-2 Datasheet (PDF)

NEe Microcomputers, Inc. 65,536 x 1 BIT DYNAMIC RANDOM ACCESS MEMORY NEe Jo&PD4164-1 ,.,. PD4164-2 J.L PD4164-3 ~rn~[m~~~illrnw DESCR IPTI ON The NEC /lPD4164 is a 65,536 words by 1 bit Dynamic N-Channel MOS RAM designed to operate from a single +5V power supply. The negative-voltage substrate bias is internally generated - its operation is both automatic and transparent. The /lPD4164 utilizes a double-poly-layer N-channel silicon gate process which provides high storage cell density, high p.

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UPD4164-1 UPD4164-2 UPD4164-3


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