UPD4164-1

NEe Microcomputers, Inc. 65,536 x 1 BIT DYNAMIC RANDOM ACCESS MEMORY NEe Jo&PD4164-1 ,.,. PD4164-2 J.L PD4164-3 ~rn~[m~~~illrnw DESCR IPTI ON The NEC /lPD4164 is a 65,536 words by 1 bit Dynamic N-Channel MOS RAM designed to operate from a single +5V power supply. The negative-voltage substrate bias is internally generated - its operation is both automatic and transparent. The /lPD4164 utilizes a double-poly-layer N-channel silicon gate process which provides high storage cell density, high performance and high reliability. The /lPD4164 uses a single transistor dynamic storage cell and advanced dynamic circuitry throughout, including the 512 sense amplifiers, which assures that power dissipation is minimized. Refresh characteristics have been chosen to maximize yield (low cost to user) while maintaining compatibility between Dynamic RAM generations. The /lPD4164 three-state output is controlled by CAS, independent of RAS. After a valid read or read-modify-write cycle, data is held...