UPD2118-2

NEe Microcomputers, Inc. 16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY NEe ,uPD2118 ,uPD2118-2 JI. PD2118-3 [~OO~[~~~~ffirnW DESCR IPTION ThepPD2118 is a single +5V power supply, 16384 word by 1 bit Dynamic MOS RAM. The IlPD2118 achieves high speed with low power dissipation by the use of single tran· sistor dynamic storage cell design and advanced dynamic circuitry. This circuit design results in the minimizing of current transients typical of dynamic RAMS. This in turn II results in high noise immunity of the IlPD2118 in a system environment. By using a multiplexing technique, the IlPD2118 can be packaged in an industry standard 16·Pin Dip utilizing 7 address input pins for the 14 address bits required. The two 7 bit address words are referred to as the ROWand COLUMN address. Two TTL clocks, ROW address strobe (RAS) and COLUMN address strobe (CAS") latch these two words into the IlPD2118. Non·critical timing requirements for RAS and CAS permit high systems per· formanc...