UPD416-2

NEe Microcomputers, Inc. 18384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY NEe f' PD416 P. PD416·1 f' PD416·2 f'PD416·3 J.L PD416·5 DESCPIIIPTION The NECI1PD416 is a 16384 words by 1 bit Dynamic MOS RAM. It is designed for memory applications where very low cost and large bit storage are important design objectives. The I1PD416 .is fabr,icated using a double-poly-layer N channel silicon gate process which affords high -storage cell density and high performance. The use of dynamic circuitry throughout, including the sense amplifiers, assures minirnal power dissipation. II Multiplexed address inputs permit the IlPD416 to be packaged in the standard 16 pin dual-in-line package. The 16 pin package provides the highest system bit densities and is available in either ceramic or plastic. Noncritical clock timing requirements allow use of the multiplexing technique while maintaining high perforrnance. F I!:AT U iii ES 16384 Words x 1 Bit Organization High Memory Density - 16 Pi...