IRFI9Z34G

www.vishay.com IRFI9Z34G, SiHFI9Z34G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration -60 VGS = -10 V 34 9.9 16 Single 0.14 TO-220 FULLPAK S G GDS D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES Isolated package High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Available Sink to lead creepage distance = 4.8 mm P-channel Available 175 °C operating temperature Dynamic dV/dt rating Low thermal resistance Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. DESCRIPTION Third generation power MOSFETs from Vishay provide the desig...