Document
JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
UMF21N DUAL DIGITAL TRANSISTOR (NPN+PNP)
DESCRIPTION Silicon epitaxial planar transistor
FEATURES z 2SA2018 and DTC114E are housed independently
in a package. z Power switching circuit in a single package. z Mounting cost and area can be cut in half.
APPLICATION z Power management circuit, mobile telephone quiver circuit z For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
SOT-363
MARKING:F21
TR1 MAXIMUM RATINGS Ta=25℃ unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature
DTR2 Absolute maximum ratings(Ta=25℃)
Parameter
Symbol
Supply voltage
VCC
Input voltage
VIN
Output current
IO IC(MAX)
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tst.