Dual N-Channel MOSFET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TSSOP8 Plastic-Encapsulate MOSFETS
CJS8804
V(BR)DSS
9
Dual N-Cha...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TSSOP8 Plastic-Encapsulate MOSFETS
CJS8804
V(BR)DSS
9
Dual N-Channel MOSFET
RDS(on)MAX
13Pȍ#9 14Pȍ #9 15.5Pȍ#9
19 Pȍ#9 27Pȍ#9
ID
8$
TSSOP8
DESCRIPTION The CJS8804 use advanced trench technology to provide excellent
RDS(ON) and low gate charge. It is ESD protected. This device is suitable
for use as a uni-directional or bi-directional load switch,facilitated by its
common-drain configuration. MARKING:
Equivalent Circuit
D1/D2 S2 S2 G2
8 7 65
S8804= Device code YY=Date Code Solid dot = Pin1 indicator Solid dot = Green molding compound device, if none,the normal device.
MAXIMUM RATINGS (Ta=25Я unless otherwise noted)
1 2 34
D1/D2 S1 S1 G1
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
* Repeti...
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