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CJND2007
Dual N-Channel MOSFET
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB5×2-6L-A Plastic-Encapsulate MOSFETS CJND2007 V(BR)DSS 20V Dual N-Channel MOSFET RDS(on)MAX 20mΩ@10V 22mΩ @4.5V 24 mΩ@3.8V 26mΩ@2.5V 35mΩ@1.8V ID 7A DFNWB5×2-6L-A DESCRIPTION The CJND2007 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. T...
JCET
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