CJLJF3117PB

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2×2-6L-U Power Management MOSFETs-Schottky CJLJF3117PB P-channel MOSFET and Schottky Barrier Diode V(BR)DSS/VR -20V RDS(on)MAX 100mΩ@-4.5V 135mΩ@-2.5V ID/IO -3.3A  250mΩ@-1.8V  20V / 0.5A   DFNWB2×2-6L-U FEATURE z Independent Pinout to Each Device to Each Device to Ease Circuit Design z High Current Schottky Diode z Featuring a MOSFET and a Schottky Barrier Diode MARKING APPLICATION z Optimized for Portable Applications Like Cell Phones, Digital Cameras,Media Players,etc z DC-DC Buck Circuits z Li-ion Battery Applications z Color Display and Camera Flash Regulators Equivalent Circuit K GS 654 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 12 A 3 D Symbol Para meter P-MOSFET VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current IDM* Pulse Drain Current Schottky Barrier Diode VRRM Peak Repetitive Reverse Voltage VR DC Blocking Voltage IO Average Rectified Forward Current Power ...