CJ7252KDW

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ7252KDW N Channel + P Channel Power MOSFET V(BR)DSS 60 V RDS(on)MAX   5Ω@10V  5.3Ω@4.5V  ID 0.34A SOT-363 -50V   8Ω@-10V  10Ω@-5V  -0.18A DESCRIPTION This N Channel + P Channel MOSFET has been designed using advanced power trench process to optimize the RDS(ON). FEATURE z High-Side Switching z Low Threshold z Fast Switching Speed APPLICATION z Drivers:Relays, Solenoids, Memories z Battery Operated Systems z Power Supply Converter Circuits z Load/Power Switching Cell Phones, Pagers MARKING: 75 Equivalent Circuit D1 G2 S2 6 54 12 3 S1 G1 D2 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter N-Channel MOSFET VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current -Continuous IDM Drain Current - Pulsed(Note1) P- Channel MOSFET VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current -Continuous IDM Drain Current – Pulsed (Note1) Power...