JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB3×2-08L-B Power Management MOSFETs-Schottky
CJ5853DC P-channel ...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB3×2-08L-B Power Management MOSFETs-
Schottky
CJ5853DC P-channel MOSFET and
Schottky Barrier Diode
V(BR)DSS/VR
-20V 20V
RDS(on)MAX
110mΩ@-4.5V 160mΩ@-2.5V 240mΩ@-1.8V
/
ID/IO
-2.7A 1A
DFNWB3×2-08L-B
C D
FEATURES
APPLICATIONS
z Independent Pinout to Each Device to Ease Circuit Design z Li-lon Battery Charging
z Ultra low VF
z High Side DC-DC Conversion Circuits
z Including a CJ2301 MOSFET and a MBR0520
Schottky (independently) in a package
z High Side Drive for Small Brushless DC Motors z Power Management in Portable，
Battery Powered Products
MARKING:
Equivalent Circuit
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
P-MOSFET VDS VGS ID IDM*
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulse Drain Current
Schottky Barrier Diode
VRRM
Peak Repetitive Reverse Voltage
VR DC Blocking Voltage
IO Average Rectified Forward Current
Power Dissipation, Temperature an...
