2SA1015

2SA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary type the NPN transistor 2SC1815 is recommended. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC -IB Ptot Tj Tstg 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Value 50 50 5 150 50 400 150 - 55 to + 150 Unit V V V mA mA mW OC OC Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 6 V, -IC = 2 mA Current Gain Group at -VCE = 6 V, -IC = 150 mA Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 10 mA Emitter Base Breakdown Voltage at -IE = 10 µA Collector Base Cutoff Current at -VCB = 50 V Emitter Cutoff Current at -VEB...