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TC55V1864FT-12

Toshiba

18-Bit CMOS SRAM

TOSHIBA 1l:55\T1864J/F1l-10/12/15 SILICON GATE CMOS PRELIMINARY 65,536 WORD x 18 BIT CMOS STATIC RAM Description Th...


Toshiba

TC55V1864FT-12

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Description
TOSHIBA 1l:55\T1864J/F1l-10/12/15 SILICON GATE CMOS PRELIMINARY 65,536 WORD x 18 BIT CMOS STATIC RAM Description The TC55V1864J/FT is a 1,179,648 bit high speed CMOS static random access memory organized as 65,536 words by 18 bits and operated from a single 3.3V supply. Toshiba's advanced CMOS technology and circuit design enable hJ9!:l speed operation. The TC55V1864J/FT features low power dissipation when the device is deselected using chip enable (CE), and has an output enable input (OE) for fast memory access. Byte access is supported by upper and lower byte controls. The TC55V1864J/FT is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are LVTTL compatible. The TC55V1864J/FT is available in a 400mil width, 44-pin plastic SOJ and thin small outline package (forward type) suitable for high density surface assembly. Features Fast access time - TC55V1864J/FT -10 - TC55V1864J/FT -12 - TC55V1864J/FT -15 Low pow...




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