TC518128BFL-70V

TOSHIBA SILICON GATE CMOS TC518l28BPL/BFL/BFWL/BFIL-70V/80V/lOV 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128B-Voperates from a single power supply of 2.7 - 5.5V. Refreshing is supported by a refresh (RFS~ input which enables two types of refreshing - auto refresh and self refresh. The TC518128B-V features a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RMI thus simplifying the microprocessor interface. The TC518128B-V is pin-compatible with the 1M bit CMOS static RAM JEDEC standard and is available in a 32-pin, 0.6 inch width plastic DIP, a small outline plastic flat package, and a 32-pin thin small outline plastic package (forward t...